Quadrupole SIMS Microprobe for dopant depth profiling and thin layer analysis in semiconductors.
The CAMECA SIMS 4550 offers extended capabilities for ultra shallow depth profiling, trace element and composition measurements of thin layers in Si, high-k, SiGe and other compound materials such as III-V for optical devices.
Do you want to know more about this product?
Please complete the enquiry form below with your details and questions and we will get back to you.
High depth resolution and high throughput
With ever shrinking device dimensions, the implant profiles and layer thickness of today’s semiconductors are often in the range of 1-10nm. The SIMS 4550 has been optimized to address these application fields by offering oxygen and cesium high density primary beam with an impact energy programmable from 5keV down to less than 150eV.
Enquiry Email: email@example.com